Zhu, Xiaoxin, Kotadia, H., Xu, Sha, Lu, Hua ORCID: https://orcid.org/0000-0002-4392-6562, Mannan, S.H., Chan, Y.C. and Bailey, C. ORCID: https://orcid.org/0000-0002-9438-3879 (2011) Multi-physics computer simulation of the electromigration phenomenon. In: ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging. IEEE Computer Society, Piscataway, USA, pp. 448-452. ISBN 9781457717703 (Print), 9781457717680 (Online) (doi:10.1109/ICEPT.2011.6066874)

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Abstract

Previous works on electromigration in microelectronics devices have been reviewed, and a multi-physics EM simulation method that combines electric, thermal, atomic diffusion, and stress analysis has been described. The proposed method can be used to predict the atomic vacancy concentration distribution and void formation in metals or alloys that are subject to current loading.

Item Type:	Conference Proceedings
Title of Proceedings:	ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging
Additional Information:	This paper forms part of the published proceedings from 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011 held in Shanghai 8-11 August 2011
Uncontrolled Keywords:	atomic diffusions, atomic vacancies, current loadings, EM simulations, multi-physics, void formation
Subjects:	Q Science > QA Mathematics > QA75 Electronic computers. Computer science T Technology > TK Electrical engineering. Electronics Nuclear engineering
Pre-2014 Departments:	School of Computing & Mathematical Sciences School of Computing & Mathematical Sciences > Department of Mathematical Sciences
Related URLs:	Publisher Organisation Organisation Organisation
Last Modified:	13 Dec 2019 11:55
URI:	http://gala.gre.ac.uk/id/eprint/7373

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