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The effect of reflow process on the contact resistance and reliability of anisotropic conductive film interconnection for flip chip on flex applications

The effect of reflow process on the contact resistance and reliability of anisotropic conductive film interconnection for flip chip on flex applications

Yin, C.Y. ORCID: 0000-0003-0298-0420, Alam, M.O., Chan, Y.C., Bailey, C. ORCID: 0000-0002-9438-3879 and Lu, Hua ORCID: 0000-0002-4392-6562 (2003) The effect of reflow process on the contact resistance and reliability of anisotropic conductive film interconnection for flip chip on flex applications. Microelectronics Reliability, 43 (4). pp. 625-633. ISSN 0026-2714 (doi:https://doi.org/10.1016/S0026-2714(02)00348-7)

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Abstract

The work presented in this paper focuses on the effect of reflow process on the contact resistance and reliability of anisotropic conductive film (ACF) interconnection. The contact resistance of ACF interconnection increases after reflow process due to the decrease in contact area of the conducting particles between the mating I/O pads. However, the relationship between the contact resistance and bonding parameters of the ACF interconnection with reflow treatment follows the similar trend to that of the as-bonded (i.e. without reflow) ACF interconnection. The contact resistance increases as the peak temperature of reflow profile increases. Nearly 40% of the joints were found to be open after reflow with 260 °C peak temperature. During the reflow process, the entrapped (between the chip and substrate) adhesive matrix tries to expand much more than the tiny conductive particles because of the higher coefficient of thermal expansion, the induced thermal stress will try to lift the bump from the pad and decrease the contact area of the conductive path and eventually, leading to a complete loss of electrical contact. In addition, the environmental effect on contact resistance such as high temperature/humidity aging test was also investigated. Compared with the ACF interconnections with Ni/Au bump, higher thermal stress in the Z-direction is accumulated in the ACF interconnections with Au bump during the reflow process owing to the higher bump height, thus greater loss of contact area between the particles and I/O pads leads to an increase of contact resistance and poorer reliability after reflow.

Item Type: Article
Uncontrolled Keywords: effect of reflow process, contact resistance, anisotropic conductive film (ACF)
Subjects: Q Science > QA Mathematics
Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Pre-2014 Departments: School of Computing & Mathematical Sciences
School of Computing & Mathematical Sciences > Centre for Numerical Modelling & Process Analysis
School of Computing & Mathematical Sciences > Centre for Numerical Modelling & Process Analysis > Computational Mechanics & Reliability Group
School of Computing & Mathematical Sciences > Department of Computer Systems Technology
School of Computing & Mathematical Sciences > Department of Mathematical Sciences
Related URLs:
Last Modified: 20 Mar 2019 11:54
URI: http://gala.gre.ac.uk/id/eprint/675

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