Taha, Mohammad Mahmoud A. and Melis, Wim J.C. ORCID: 0000-0003-3779-8629 (2015) Analogue auto-associative memory using a multi-valued memristive memory cell. In: Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15). IEEE, Boston, MA (US), pp. 94-99. ISBN 978-1-4673-7848-2 (doi:https://doi.org/10.1109/NANOARCH.2015.7180593)

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Abstract

Most brain-like computing systems build up from neural networks. While there are some essential problems with this approach, it is well-known that the brain functionally operates as an associative memory. Building associative memories using conventional CMOS technology has already been performed, but this approach suffers from a lack of scalability and information density. Additionally, for a long time, one of the differences between analogue and digital electronics was the fact that digital electronics allowed for easier data storage through a variety of different memory cell architectures. These memory designs make extensive use of transistors and generally trade area, performance and power. However, memristors can be used as high density, analogue, passive storage elements and this paper presents 2 memory cell designs that allow for such multi-valued storage. The noise resistance of these cells is tested and indicates a very good tolerance to external influences, while overall they provide for a very accurate storage of data with high information density. Following on from the description of the storage cells, the paper then continues to build them into an associative memory.

Item Type:	Conference Proceedings
Title of Proceedings:	Proceedings of the 2015 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH´15)
Additional Information:	© 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Uncontrolled Keywords:	Memristive memory, Analogue memory, Associative memory, Memristors circuits, Memristive memory cell, Reliable memory, Multi-value memory, Non Volatile Memory
Faculty / School / Research Centre / Research Group:	Faculty of Engineering & Science Faculty of Engineering & Science > School of Engineering (ENG)
Related URLs:	Organisation
Last Modified:	30 Apr 2020 16:05
URI:	http://gala.gre.ac.uk/id/eprint/13656

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