aging evaluation

Li, Ling-Ling, Liu, Zhi-Feng, Tseng, Ming-Lang, Zhou, Li ORCID: 0000-0001-7132-5935 and Qi, Fu-Dong (2019) Prediction of IGBT power module remaining lifetime using the aging state approach. Microelectronics Reliability, 102:113476. ISSN 0026-2714 (doi:https://doi.org/10.1016/j.microrel.2019.113476)

external parameter

Li, Ling-Ling, Liu, Zhi-Feng, Tseng, Ming-Lang, Zhou, Li ORCID: 0000-0001-7132-5935 and Qi, Fu-Dong (2019) Prediction of IGBT power module remaining lifetime using the aging state approach. Microelectronics Reliability, 102:113476. ISSN 0026-2714 (doi:https://doi.org/10.1016/j.microrel.2019.113476)

IGBT power modules

Li, Ling-Ling, Liu, Zhi-Feng, Tseng, Ming-Lang, Zhou, Li ORCID: 0000-0001-7132-5935 and Qi, Fu-Dong (2019) Prediction of IGBT power module remaining lifetime using the aging state approach. Microelectronics Reliability, 102:113476. ISSN 0026-2714 (doi:https://doi.org/10.1016/j.microrel.2019.113476)

power cycles experiment

Li, Ling-Ling, Liu, Zhi-Feng, Tseng, Ming-Lang, Zhou, Li ORCID: 0000-0001-7132-5935 and Qi, Fu-Dong (2019) Prediction of IGBT power module remaining lifetime using the aging state approach. Microelectronics Reliability, 102:113476. ISSN 0026-2714 (doi:https://doi.org/10.1016/j.microrel.2019.113476)

remaining lifetime

Li, Ling-Ling, Liu, Zhi-Feng, Tseng, Ming-Lang, Zhou, Li ORCID: 0000-0001-7132-5935 and Qi, Fu-Dong (2019) Prediction of IGBT power module remaining lifetime using the aging state approach. Microelectronics Reliability, 102:113476. ISSN 0026-2714 (doi:https://doi.org/10.1016/j.microrel.2019.113476)