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Prediction of IGBT power module remaining lifetime using the aging state approach

Prediction of IGBT power module remaining lifetime using the aging state approach

Li, Ling-Ling, Liu, Zhi-Feng, Tseng, Ming-Lang, Zhou, Li ORCID: 0000-0001-7132-5935 and Qi, Fu-Dong (2019) Prediction of IGBT power module remaining lifetime using the aging state approach. Microelectronics Reliability, 102:113476. ISSN 0026-2714 (doi:

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Insulated Gate Bipolar Transistor (IGBT) is the core power device in the fields of railways, new energy sources, and automobiles. The safe and reliable operation of IGBT is the basis to ensure the sustained and steady development of all walks of life. The junction-to-case thermal resistance of the IGBT power modules can manifest the fatigue degree of the solder layer. The saturation voltage drop manifests the aging degree of the IGBT bonding wire. Therefore, the IGBT reliability can be judged by a certain rule along with the external parameters such asthe junction-to-case thermalresistance Rth and thesaturation voltage dropVce. Inorder to graspthis rule, this study illustrates the correlations between the external parameters of IGBT and the number of power cycles. As a result, the functional relationships between the average change rate of junction-to-case thermal resistance and the number of power cycles ( R Δ th—n) as well as the average saturation voltage drop rate of change and the number of power cycles ( V Δ ce—n) have been gained from IGBT test samples. After obtaining these functional relationships, for any IGBT of the same model in working condition, a proposition of judging the aging degree can beobtained. Here,the agingdegree ofthe IGBTis represented bya real numberinthe interval [0,1] and the reliability of the above proposition is calculated from the standard deviation of the working lifetime of each test sample. The method proposed in this study can not only be used to judge the aging degree of IGBT, but also to estimate the remaining lifetime.

Item Type: Article
Uncontrolled Keywords: IGBT power modules, external parameter, aging evaluation, remaining lifetime, power cycles experiment
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Faculty / Department / Research Group: Faculty of Business
Faculty of Business > Department of Systems Management & Strategy
Faculty of Business > Networks and Urban Systems Centre (NUSC)
Faculty of Business > Networks and Urban Systems Centre (NUSC) > Connected Cities Research Group
Last Modified: 11 Sep 2019 10:30
Selected for GREAT 2016: None
Selected for GREAT 2017: None
Selected for GREAT 2018: None
Selected for GREAT 2019: None
Selected for REF2021: None

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