Ali, M. Tanseer, Wu, Ruiheng, Mao, Luhong, Callaghan, Peter and Rapajic, Predrag (2014) High frequency CMOS amplifier with improved linearity. IET Circuits, Devices & Systems, 8 (6). pp. 450-458. ISSN 1751-858X (Print), 1751-8598 (Online) (doi:https://doi.org/10.1049/iet-cds.2013.0327)

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Abstract

In this paper, a novel amplifier linearisation technique based on the negative impedance compensation is presented. As demonstrated by using Volterra model, the proposed technique is suitable for linearising amplifiers with low open-loop gain, which is appropriate for RF/microwave applications. A single-chip CMOS amplifier has been designed using the proposed method, and the simulation results show that high gain accuracy (improved by 38%) and high linearity (IMD3 improved by 14 dB, OIP3 improved by 11 dB and adjacent channel power ratio (ACPR) improved by 44% for CDMA signal) can be achieved.

Item Type:	Article
Additional Information:	[1] This paper is a postprint of a paper submitted to and accepted for publication in IET Circuits, Devices & Systems and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library. [2] The definitive version is available at: http://digital-library.theiet.org/content/journals/10.1049/iet-cds.2013.0327 or http://dx.doi.org/10.1049/iet-cds.2013.0327 [3] Citation: Ali, M. Tanseer, Wu, Ruiheng, Mao, Luhong, Callaghan, Peter and Rapajic, Predrag (2014) High frequency CMOS amplifier with improved linearity. IET Circuits, Devices & Systems. ISSN 1751-858X (Print), 1751-8598 (Online) (In Press) (doi:10.1049/iet-cds.2013.0327).
Uncontrolled Keywords:	microwave integrated circuits, amplifiers, CMOS integrated circuits
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty / School / Research Centre / Research Group:	Faculty of Engineering & Science
Related URLs:	Publisher Organisation Organisation
Last Modified:	21 Apr 2017 10:50
URI:	http://gala.gre.ac.uk/id/eprint/9375

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