Ali, M. Tanseer, Wu, Ruiheng, Callaghan, Peter and Rapajic, Predrag (2011) Design of a highly linear high frequency amplifier using Volterra model. In: Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE). Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE) . Institute of Electrical and Electronic Engineers, Pistacaway, USA, pp. 355-358. ISBN 978-1-4244-8268-9 (doi:https://doi.org/10.1109/MAPE.2011.6156259)

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Abstract

In this paper, a novel linearisation technique based on negative impedance distortion correction method has been formulated using a Volterra model of nonlinear effects of feedback amplifier topology. This proposed technique can be suitable for linearising amplifiers with low open-loop gain, which is appropriate for RF/microwave applications. Even though the analytical model has been approximated, improvements in the performance are confirmed by the circuit simulations using an 8 GHz CMOS amplifier. With the proposed technique, high linearity (1MD3 improved by 39 dBc and OIP3 improved by 18 dB) and high gain accuracy (5% improved gain) can be achieved at microwave frequencies.

Item Type:	Conference Proceedings
Title of Proceedings:	Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE)
Additional Information:	[1] This paper appears in proceedings of the 2011 IEEE 4th International Symposium on Microwave, Antenna, Propagation, and EMC Technologies for Wireless Communications (MAPE), from 1-3 Nov. 2011, Beijing.
Uncontrolled Keywords:	amplifier, linearisation, negative impedance compensation, Volterra analysis
Subjects:	T Technology > TA Engineering (General). Civil engineering (General)
Pre-2014 Departments:	School of Engineering School of Engineering > Department of Engineering Systems
Related URLs:	Publisher Organisation Organisation
Last Modified:	14 Oct 2016 09:20
URI:	http://gala.gre.ac.uk/id/eprint/8169

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