Patil, Nishad, Das, Diganta, Yin, Chunyan ORCID: https://orcid.org/0000-0003-0298-0420, Lu, Hua ORCID: https://orcid.org/0000-0002-4392-6562, Bailey, Chris ORCID: https://orcid.org/0000-0002-9438-3879 and Pecht, Michael (2009) A fusion approach to IGBT power module prognostics. In: 10th International Conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in Microelectronics and Microsystems, 2009. EuroSimE 2009. Institute of Electrical and Electronics Engineers, Inc., Piscataway, NJ, USA, pp. 195-199. ISBN 9781424441600 (doi:10.1109/ESIME.2009.4938491)

Full text not available from this repository.

Abstract

In this paper, a framework for fusion approach to IGBT power module prognostics is reported. A failure modes, mechanisms, and effects analysis (FMMEA) for the IGBT power module is performed to identify critical failure mechanisms. For the failure mechanisms identified, relevant physics of failure models are discussed. In addition, the parameters affected by the critical failure mechanisms are identifed that are to be monitored in application. The implementation of this prognostics approach involves precursor parameter monitoring, parameter isolation and trending, and the use of relevant physics of failure models for remaining useful life estimates.

Item Type:	Conference Proceedings
Title of Proceedings:	10th International Conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in Microelectronics and Microsystems, 2009. EuroSimE 2009.
Additional Information:	[1] ISBN 978-1-4244-4160-0 (Print), 978-1-4244-4161-7 (Electronic). [2] This paper was first presented at the 10th International Conference on Thermal, Mechanical and Multi-Physics simulation and Experiments in Microelectronics and Microsystems, held from 26-29 April 2009 (EuroSimE 2009) in Delft, The Netherlands. [3] INSPEC Accession Number: 10647498.
Uncontrolled Keywords:	fusion approach, failure mechanisms, parameters, bonding, ceramics, condition monitoring, copper, degradation, failure analysis, fatigue, insulated gate bipolar transistors, multichip modules, wire
Subjects:	Q Science > QA Mathematics T Technology > TK Electrical engineering. Electronics Nuclear engineering
Pre-2014 Departments:	School of Computing & Mathematical Sciences School of Computing & Mathematical Sciences > Department of Computer Systems Technology School of Computing & Mathematical Sciences > Department of Mathematical Sciences
Related URLs:	Publisher Publisher Organisation
Last Modified:	20 Mar 2019 11:54
URI:	http://gala.gre.ac.uk/id/eprint/4458

Actions (login required)

View Item