Bailey, C. ORCID: https://orcid.org/0000-0002-9438-3879, Zhu, X., Lu, H. ORCID: https://orcid.org/0000-0002-4392-6562 and Yin, C. ORCID: https://orcid.org/0000-0003-0298-0420 (2012) Modelling metal migration for high reliability components when subjected to thermo-mechanical loading. In: Proceedings of the 2012 IEEE 14th Electronics Packaging Technology Conference. Institute of Electrical and Electronics Engineers, Inc., Piscataway, NJ, USA, pp. 474-478. ISBN 9781467345538 (doi:10.1109/EPTC.2012.6507130)

Full text not available from this repository.

Abstract

In recent years, high density packaging (HDP) in electronics manufacturing has been increasingly adopted to meet the needs of miniaturization and increasing functionality in electronic products. One of the failure mechanisms that is causing considerable concern is Electro-migration (EM). EM is due to metal transportation at the atomic level caused by high current density which is an inevitable consequence of miniaturization. Em is known to cause voids and hill-locks in metal conductors and in the worst cases, this leads to open or short circuits. Moreover, higher current density and complexity of interconnect structures also generates high temperature and stress gradients which result in void formation due ti thermo-migration and stress-migration respectively in conductors. As a result, the true causes of metal migration involve a multi-physical cross coupling relationship and are hard understood and characterize. For example in flip-chip interconnects the ever decreasing size of solder joints can lead to current densities reaching 10(4) A/cm2, these will promote electro-migration but also result in high temperature and stress gradients which need to be understood, particularly when aiming to develop qualification tests for this phenomena.

Item Type:	Conference Proceedings
Title of Proceedings:	Proceedings of the 2012 IEEE 14th Electronics Packaging Technology Conference
Additional Information:	[1] This paper was first presented at the 14th Electronics Packaging Technology Conference 2012 (EPTC 2012) IEEE 14th held from 5–7 December 2012 in Singapore. [2] ISBN: 978-1-4673-4551-4; 978-1-4673-4553-8 (Print); 978-1-4673-4551-4 (Online)
Uncontrolled Keywords:	electro-migration, metal migration, thermo-mechanical loading
Subjects:	Q Science > QA Mathematics > QA76 Computer software Q Science > QC Physics Q Science > QD Chemistry
Pre-2014 Departments:	School of Computing & Mathematical Sciences School of Computing & Mathematical Sciences > Centre for Numerical Modelling & Process Analysis > Computational Mechanics & Reliability Group
Related URLs:	Publisher Publisher Organisation
Last Modified:	20 Mar 2019 11:54
URI:	http://gala.gre.ac.uk/id/eprint/10816

Actions (login required)

View Item