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High frequency CMOS amplifier with improved linearity

High frequency CMOS amplifier with improved linearity

Ali, M. Tanseer, Wu, Ruiheng, Mao, Luhong, Callaghan, Peter and Rapajic, Predrag (2014) High frequency CMOS amplifier with improved linearity. IET Circuits, Devices & Systems, 8 (6). pp. 450-458. ISSN 1751-858X (Print), 1751-8598 (Online) (doi:https://doi.org/10.1049/iet-cds.2013.0327)

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Abstract

In this paper, a novel amplifier linearisation technique based on the negative impedance compensation is presented. As demonstrated by using Volterra model, the proposed technique is suitable for linearising amplifiers with low open-loop gain, which is appropriate for RF/microwave applications. A single-chip CMOS amplifier has been designed using the proposed method, and the simulation results show that high gain accuracy (improved by 38%) and high linearity (IMD3 improved by 14 dB, OIP3 improved by 11 dB and adjacent channel power ratio (ACPR) improved by 44% for CDMA signal) can be achieved.

Item Type: Article
Additional Information: [1] This paper is a postprint of a paper submitted to and accepted for publication in IET Circuits, Devices & Systems and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library. [2] The definitive version is available at: http://digital-library.theiet.org/content/journals/10.1049/iet-cds.2013.0327 or http://dx.doi.org/10.1049/iet-cds.2013.0327 [3] Citation: Ali, M. Tanseer, Wu, Ruiheng, Mao, Luhong, Callaghan, Peter and Rapajic, Predrag (2014) High frequency CMOS amplifier with improved linearity. IET Circuits, Devices & Systems. ISSN 1751-858X (Print), 1751-8598 (Online) (In Press) (doi:10.1049/iet-cds.2013.0327).
Uncontrolled Keywords: microwave integrated circuits, amplifiers, CMOS integrated circuits
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Faculty / School / Research Centre / Research Group: Faculty of Engineering & Science
Related URLs:
Last Modified: 21 Apr 2017 10:50
URI: http://gala.gre.ac.uk/id/eprint/9375

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