Transfer of functional ceramic thin films using a thermal release process
Dou, Guangbin, Holmes, Andrew S., Yeatman, Eric M., Wright, Robert V., Kirby, Paul B. and Yin, Chunyan (2011) Transfer of functional ceramic thin films using a thermal release process. Advanced Materials, 23 (10). pp. 1252-1256. ISSN 0935-9648 (Print), 1521-4095 (Online) (doi:10.1002/adma.201004391)Full text not available from this repository.
Being ferroelectric, piezoelectric, and pyroelectric, lead zirconate titanate (PZT) is one of the most useful and prominent electroceramics and is commonly used as the transduction element of actuators and sensors in microelectromechanical systems (MEMS) and micro-optics [1–6] and in memory devices. [7,8] It is also being explored for new applications such as nanorods,  domain physics,  and nanodevices. [11,12] Transfer of PZT thin films can allow integration of such films on substrates that are incompatible with the requirements of film deposition. However, transfer of functional ceramic thin films has long been hampered by the difficulty of detaching the film from the growth substrate. [13,14] Here, we describe a transfer process for PZT films grown on Ti/Pt coated Si wafers, where the films are solder bonded onto a target substrate and lifted off in one step, using separation of the PZT–Pt interface by thermal stress. The transferred films show low mechanical damage, ferroelectric hysteresis with an “imprinted” polarization,  reduced permittivity, and improved loss tangent.
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