Skip navigation

High current density induced damage mechanisms in electronic solder joints: a state-of-the-art review

High current density induced damage mechanisms in electronic solder joints: a state-of-the-art review

Alam, M. O., Bailey, Christopher, Wu, B.Y., Yang, Dan and Chan, Y.C. (2007) High current density induced damage mechanisms in electronic solder joints: a state-of-the-art review. HDP'07: Proceedings of the 2007 International Symposium on High Density Packaging and Microsystem Integration. Institute of Electrical and Electronics Engineers, Inc., New York, pp. 93-99. ISBN 9781424412525 (doi:10.1109/HDP.2007.4283569)

[img]
Preview
PDF
07_78.pdf - Published Version

Download (3MB)

Abstract

High current density induced damages such as electromigration in the on-chip interconnection /metallization of Al or Cu has been the subject of intense study over the last 40 years. Recently, because of the increasing trend of miniaturization of the electronic packaging that encloses the chip, electromigration as well as other high current density induced damages are becoming a growing concern for off-chip interconnection where low melting point solder joints are commonly used. Before long, a huge number of publications have been explored on the electromigration issue of solder joints. However, a wide spectrum of findings might confuse electronic companies/designers. Thus, a review of the high current induced damages in solder joints is timely right this moment. We have selected 6 major phenomena to review in this paper. They are (i) electromigration (mass transfer due electron bombardment), (ii) thermomigration (mass transfer due to thermal gradient), (iii) enhanced intermetallic compound growth, (iv) enhanced current crowding, (v) enhanced under bump metallisation dissolution and (vi) high Joule heating and (vii) solder melting. the damage mechanisms under high current stressing in the tiny solder joint, mentioned in the review article, are significant roadblocks to further miniaturization of electronics. Without through understanding of these failure mechanisms by experiments coupled with mathematical modeling work, further miniaturization in electronics will be jeopardized

Item Type: Book Section
Additional Information: This paper forms part of the published proceedings from International Symposium on High Density Packaging and Microsystems Integration Shanghai, Peoples R China, Jun 26-28, 2007
Uncontrolled Keywords: high current density induced damage, electromigration,on-chip interconnection, off-chip interconnection, solder joints, electron bombardment, thermomigration, current crowding, failure mechanisms, mathematical modelling,
Subjects: Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Pre-2014 Departments: School of Computing & Mathematical Sciences
School of Computing & Mathematical Sciences > Centre for Numerical Modelling & Process Analysis
School of Computing & Mathematical Sciences > Centre for Numerical Modelling & Process Analysis > Computational Mechanics & Reliability Group
School of Computing & Mathematical Sciences > Department of Computer Systems Technology
School of Computing & Mathematical Sciences > Department of Mathematical Sciences
Related URLs:
Last Modified: 14 Oct 2016 09:03
Selected for GREAT 2016: None
Selected for GREAT 2017: None
Selected for GREAT 2018: None
URI: http://gala.gre.ac.uk/id/eprint/1160

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year

View more statistics