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Modelling the stress effect during metal migration in electronic interconnects

Modelling the stress effect during metal migration in electronic interconnects

Zhu, X., Lu, H. ORCID: 0000-0002-4392-6562 and Bailey, C. ORCID: 0000-0002-9438-3879 (2014) Modelling the stress effect during metal migration in electronic interconnects. In: 14th IEEE International Conference on Nanotechnology. IEEE, pp. 108-112. ISSN 1944-9399 (doi:https://doi.org/10.1109/NANO.2014.6968180)

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Abstract

Stress effects during metal migration and their numerical modeling methods are reviewed. A multi-physics simulation method is proposed and developed so that the electric current and stress can be solved simultaneously and the vacancy concentration predicted in a seamless framework. The stress generated by atomic movement and back stress effects [1] have been especially considered and modeled in this work. The results are compared to experiment without considering stress evolution and are in accordance with Blech's experimental results [1] and Black's model [2].

Item Type: Conference Proceedings
Title of Proceedings: 14th IEEE International Conference on Nanotechnology
Additional Information: Nanotechnology (IEEE-NANO), 2014 IEEE 14th International Conference, 18-21 August 2014, Toronto, ON, Canada.
Faculty / Department / Research Group: Faculty of Liberal Arts & Sciences
Last Modified: 20 Mar 2019 11:54
Selected for GREAT 2016: None
Selected for GREAT 2017: None
Selected for GREAT 2018: None
Selected for GREAT 2019: None
Selected for REF2021: None
URI: http://gala.gre.ac.uk/id/eprint/12861

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