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Modelling electromigration for microelectronics design

Modelling electromigration for microelectronics design

Zhu, Xiao, Kotadia, Hiren, Xu, Sha, Lu, Hua ORCID: 0000-0002-4392-6562, Mannan, Samjid, Bailey, Chris ORCID: 0000-0002-9438-3879 and Chan, Yancheong (2013) Modelling electromigration for microelectronics design. Journal of Computational Science and Technology, 7 (2). pp. 251-264. ISSN 1881-6894 (doi:https://doi.org/10.1299/jcst.7.251)

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Abstract

Computer simulation of electromigration (EM) in microelectronics devices has been reviewed and a multi-physics numerical simulation method has been proposed and developed so that the electric current, temperature, stress can be solved simultaneously and the vacancy concentration can be predicted in a seamless framework. The design considerations for resisting EM is also discussed in this work and a shunt structure for solder joint pad is proposed and its potential for the reduction of EM risk is demonstrated.

Item Type: Article
Additional Information: [1] Published in Journal of Computational Science and Technology (2013) Vol. 7, No. 2 - Special issue on International Computational Mechanics Symposium, 2012 (ICMS2012), Kobe. [2] The JSME-CMD (Japan Society of Mechanical Engineers-Computational Mechanics Division) International Computational Mechanics Symposium (ICMS) 2012 was held during October 9-11, 2012, to celebrate the 25th anniversary of the Division of Computational Mechanics which was established in 1988.
Uncontrolled Keywords: electromigration, simulation, shunt, solder joint
Subjects: Q Science > QA Mathematics
T Technology > T Technology (General)
Pre-2014 Departments: School of Computing & Mathematical Sciences > Centre for Numerical Modelling & Process Analysis > Computational Mechanics & Reliability Group
School of Computing & Mathematical Sciences
Related URLs:
Last Modified: 20 Mar 2019 11:54
URI: http://gala.gre.ac.uk/id/eprint/10831

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